Growth of GaN on NdGaO3 substrates by pulsed laser deposition

Thin Solid Films

Volumn 407, Issue 1-2, 2002, Pages 114-117

  Takahashi, Hiroyuki ^a   Ohta, Jitsuo ^a   Fujioka, Hiroshi ^a   Oshima, Masaharu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; Hetero epitaxial growth; NdGaO3; Pulsed laser deposition

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; GALLIUM NITRIDE; INTERFACES (MATERIALS); NEODYMIUM COMPOUNDS; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE-ANGLE X-RAY DIFFRACTION (GIXD);

EPITAXIAL GROWTH;

EID: 0037155430     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00022-6     Document Type: Conference Paper

References (9)