CAICISS characterization of GaN films grown by pulsed laser deposition

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1153-1157

  Ohta, J ^a   Fujioka, H ^a   Furusawa, M ^b   Sasaki, A ^b   Yoshimoto, M ^b   Koinuma, H ^b   Sumiya, M ^c   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A3. Laser epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); IONS; PULSED LASER DEPOSITION; SAPPHIRE; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

COAXIAL IMPACT-COLLISION ION SCATTERING SPECTROSCOPY (CAICISS);

FILM GROWTH;

EID: 0036531149     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02074-7     Document Type: Article

References (14)