Effect of AlN buffer layers on GaN/MnO structure

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 192-195

  Ito, S ^a   Fujioka, H ^a   Ohta, J ^a   Takahashi, H ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MANGANESE OXIDE; MORPHOLOGY; NITRIDES; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SUBSTRATES; SURFACE MORPHOLOGY;

ALN BUFFER LAYERS; GAN FILM; LATTICE-MATCHED; PHOTOLUMINESCENCE MEASUREMENTS;

WIDE BAND GAP SEMICONDUCTORS;

EID: 2342648522     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390020     Document Type: Conference Paper

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