Growth of GaN on nearly lattice matched MnO substrates by pulsed laser deposition

Applied Surface Science

Volumn 197-198, Issue , 2002, Pages 384-386

  Ito, S ^a   Ohta, J ^a   Fujioka, H ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; Hetero epitaxial growth; MnO; Pulsed laser deposition (PLD)

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SINGLE CRYSTALS; X RAY ANALYSIS;

GRAZING INCIDENCE-ANGLE X-RAY REFLECTIVITIES (GIXR);

PULSED LASER DEPOSITION;

EID: 0036424556     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00345-8     Document Type: Conference Paper

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