G-GIXD characterization of GaN grown by laser MBE

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1158-1162

  Takahashi, H ^a   Ohta, J ^a   Fujioka, H ^a   Oshima, M ^a   Kimura, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NIPPON STEEL CORPORATION   (Japan)

Author keywords

A1. High resolution X ray diffraction; A1. Stresses; A3. Laser epitaxy; B1. Nitrides

Indexed keywords

CHEMICAL RELAXATION; FERRITES; FILM GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM COMPOUNDS; STRESSES; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GENERALIZED-GRAZING X-RAY DIFFRACTION (G-GIXD);

MOLECULAR BEAM EPITAXY;

EID: 0036531594     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02148-0     Document Type: Article

References (11)