III-nitride growth on lithium niobate: A new substrate material for polarity engineering in III-nitride heteroepitaxy

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 9-14

  Doolittle, W Alan ^a   Namkoong, Gon ^b   Carver, Alexander ^b   Henderson, Walter ^b   Jundt, Dieter ^b   Brown, April S ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Crystal Technology Inc   (United States)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL LATTICES; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; NONLINEAR OPTICS; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SUBSTRATES;

LATTICE MISMATCH; NONLINEAR OPTICAL PROPERTIES; POLARITY ENGINEERING;

LITHIUM NIOBATE;

EID: 0037696791     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l1.4     Document Type: Conference Paper

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