CMOS scaling beyond 0.1 μm: how far can it go?

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 6-9

  Taur, Yuan ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

POLYSILICON GATE DEPLETION; SHORT CHANNEL EFFECT; TUNNELING CURRENTS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032599276     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)