Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 8290-8297

  Gordijn, A ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLINE MATERIALS; DEPOSITION; DIFFUSION; ELECTRIC POTENTIAL; ETCHING; HIGH TEMPERATURE EFFECTS; HYDROGEN; SEMICONDUCTOR DOPING; STAINLESS STEEL;

ATOMIC HYDROGEN; DEPOSITION TEMPERATURE; MICROCRYSTALLINE SILICON; SUBLAYERS;

SILICON;

EID: 3142766215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1745122     Document Type: Article

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