Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon

Applied Physics Letters

Volumn 71, Issue 23, 1997, Pages 3403-3405

  Saitoh, K ^a   Kondo, M ^a,b   Fukawa, M ^a   Nishimiya, T ^a   Matsuda, A ^a,b   Futako, W ^b   Shimizu, I ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ELECTRODES; GLOW DISCHARGES; HYDROGEN; PLASMAS; RAMAN SPECTROSCOPY;

CHEMICAL TRANSPORT EFFECTS; HYDROGEN PLASMA TREATMENT; MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 0031560356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120324     Document Type: Article

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