Incorporation and thermal stability of hydrogen in amorphous silicon and germanium

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 40-45

  Beyer, W ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; DESORPTION; DIFFUSION; ELECTRONIC DENSITY OF STATES; GERMANIUM; MICROSTRUCTURE; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY;

HYDROGEN CHEMICAL POTENTIAL; HYDROGEN EVOLUTION; HYDROGEN INCORPORATION; HYDROGENATED AMORPHOUS GERMANIUM; HYDROGENATED AMORPHOUS SILICON;

HYDROGEN;

EID: 0030563566     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00652-4     Document Type: Article

References (8)

1. R.A. Street, J. Kakalios and T.M. Hayes, Phys. Rev. B34 (1986) 3030.
2. W. Beyer J., Herion, H. Wagner and U. Zastrow, Philos. Mag. B63 (1991) 269.
3. W. Beyer and H. Wagner, J. Non-Cryst. Solids 59&60 (1983) 161.
4. W. Beyer, unpublished.
5. D.E. Carlson and C.W. Magee, Appl. Phys. Lett. 33 (1978) 81.
6. W. Beyer and H. Wagner, in: Amorphous Silicon Technology - 1994, ed. E.A. Schiff, M. Hack, A. Madan, M. Powell and A. Matsuda (Materials Research Society, Pittsburgh, PA, 1994) p. 323.
7. R.A. Street, C.C. Tsai, J. Kakalios and W.B. Jackson, Philos. Mag. B56 (1987) 305.
8. J. Shinar, R. Shinar, X.L. Wu, S. Mitra and R.F. Girvan, Phys. Rev. B43 (1991) 1631.