High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 637-642

  Gordijn, A ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; HIGH TEMPERATURE EFFECTS; IMPURITIES; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SOLAR CELLS; ULTRAVIOLET SPECTROSCOPY;

GROWTH RATE; LIGHT TRAPPING;

POLYSILICON;

EID: 1642520669     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a6.8     Document Type: Conference Paper

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