Epitaxial growth of the wurtzite (112̄0) AlN thin films on Si(100) with MnS buffer layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 B, 2002, Pages

  Song, Jeong Hwan ^b   Chikyow, Toyohiro ^a   Yoo, Young Zo ^a   Ahmet, Parhat ^a   Koinuma, Hideomi ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Natl Institute for Material Science ^*

Author keywords

Epitaxial AlN; Heterostructure; MnS buffer layer; PLD; Wurtzite (112 0)

Indexed keywords

ALUMINUM NITRIDE; EPITAXIAL GROWTH; EXCIMER LASERS; FILM GROWTH; HETEROJUNCTIONS; HIGH ENERGY ELECTRON DIFFRACTION; MANGANESE COMPOUNDS; X RAY DIFFRACTION;

EPITAXIAL ORIENTATION;

THIN FILMS;

EID: 0037113606     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1291     Document Type: Article

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