Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 335-339

  Ambacher, O ^a   Dimitrov, R ^a   Lentz, D ^a   Metzger, T ^a   Rieger, W ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; PHOTOTHERMAL DEFLECTION; SPECTRALLY RESOLVED PHOTOCONDUCTIVITY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0030681919     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00623-9     Document Type: Article

References (22)

1. A.J. Noreika, M. H. Francombe and S.A. Zeitman, J. Vac. Sci. Technol. 6 (1969) 194.
2. S. Yoshida, S. Misawa and A. Itoh, Appl. Phys. Lett. 26 (1975) 462.
3. M.T. Duffy, C.C. Wang, G.D. O'Clock, Jr., S.H. McFarlane and P.J. Zanzucchi, J. Electron. Mater. 2 (1973) 359.
4. J.I. Pankove, MRS Symp. Proc. 162 (1990) 515.
5. S. Nakamura, Jpn. J. Appl. Phys. 10A (1991) L1705.
6. M. Morita, S. Isogai, N. Shimizu, K. Tsubouchi and N. Mikohiba, Jpn. J. Appl. Phys. 19 (1981) L173.
7. M. Morita, M. Useugi, S. Isogai, K. Tsubouchi and N. Mikoshiba, Jpn. J. Appl. Phys. 20 (1981) 17.
8. C. Sun and M. Razeghi, Appl. Phys. Lett. 63 (1993) 973.
9. J. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Crystal Growth 98 (1989) 209.
10. A.C. Jones, J. Auld, S.A. Rushworth, D.J. Houlton and G.W. Critchlow, J. Mater. Chem. 4 (1994) 1591.
11. E.T. Fitzgerald, D. O'Hare, A.C. Jones and J.S. Foord, Surf. Sci. 278 (1992) 111.
12. O. Ambacher, A. Bergmair, M.S. Brandt, R. Dimitrov, G. Dollinger, R.A. Fischer, A. Miehr, T. Metzger and M. Stutzmann, J. Vac. Sci. Technol. B, submitted.
13. M. Schuster and H. Göbel, J. Phys. D: Appl. Phys. 28 (1995) A270.
14. T. Metzger, E. Born, R. Stömmer, W. Rieger, R. Dimitrov, D. Lentz, H. Angerer, O. Ambacher and M. Stutzmann, MRS Proc., Spring Meeting, San Francisco, CA, 1996, accepted.
15. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
16. W.B. Jackson, N.M. Amer, A.C. Boccara and D. Fournier, Appl. Optics 20 (1981) 1333.
17. W.B. Jackson and N.M. Amer, Phys. Rev. B 25 (1982) 5559.
18. S. Pacesova and L. Jastrabik, Czech. J. Phys. B 29 (1979) 913.
19. D.W. Jenkins and J.D. Dow, Phys. Rev. B 39 (1987) 317.
20. H. Amano, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. 27 (1988) L1384.
21. S. Yoshida, S. Misawa and S. Gonda, J. Appl. Phys. 53 (1982) 6844.
22. Y. Koide, H. Itoh, M.R.H. Khan, K. Hiramatu, N. Sawaki and I. Akasaki, J. Appl. Phys. 61 (1986) 4540.