Effect of sidewall properties on the bottom microtrench during SiO 2 etching in a CF4 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 425-432

  Min, Jae Ho ^a   Lee, Gye Re ^a   Lee, Jin Kwan ^a   Moon, Sang Heup ^a   Kim, Chang Koo ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; ETCHING; PLASMAS; POLYMERS; SUBSTRATES;

MICROTRENCH FORMATION; SIDEWALL SURFACE MATERIALS; STEP-SHAPED MATERIALS;

SILICA;

EID: 31144460763     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1865113     Document Type: Conference Paper

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