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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 3, 2001, Pages 730-735

Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

(4) Cho, B O a Hwang, S W a Lee, G R a Sang Heup Moon, a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DEPOSITION; FLUOROCARBONS; MICROELECTROMECHANICAL DEVICES; OPTOELECTRONIC DEVICES; SILICA; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

ANGULAR DEPENDENCE; ETCH RATES;

PLASMA ETCHING;

EID: 0035335759 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1368202 Document Type: Article

Times cited : (24)

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