Growth and properties of InN, InGaN, and InN/InGaN quantum wells

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 93-101

  Naoi, H ^a   Kurouchi, M ^a   Muto, D ^a   Takado, S ^a   Araki, T ^a   Miyajima, T ^b   Na, H ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; CRYSTALLINE QUALITY; GROWTH SEQUENCES; TEMPLATES;

CRYSTALLINE MATERIALS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31144440064     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563526     Document Type: Conference Paper

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