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Volumn 44, Issue 1-7, 2005, Pages
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Fabrication and characterization of InN-based quantum well structures grown by radio-frequency plasma-assisted molecular-beam epitaxy
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Author keywords
In rich InXGa1 XN; InN; Optical property; Quantum well; RF MBE; X ray diffraction
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Indexed keywords
INDIUM COMPOUNDS;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
PLASMA APPLICATIONS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR GROWTH;
STRUCTURE (COMPOSITION);
X RAY DIFFRACTION ANALYSIS;
IN-RICH INXGA1-XN;
INN;
QUANTUM SIZE EFFECT;
RADIO FREQUENCY MOLECULAR BEAM EPITAXY (RF-MBE);
STARK EFFECT;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 17444422192
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.L230 Document Type: Article |
Times cited : (30)
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References (13)
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