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Volumn 44, Issue 1-7, 2005, Pages

Fabrication and characterization of InN-based quantum well structures grown by radio-frequency plasma-assisted molecular-beam epitaxy

Author keywords

In rich InXGa1 XN; InN; Optical property; Quantum well; RF MBE; X ray diffraction

Indexed keywords

INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; STRUCTURE (COMPOSITION); X RAY DIFFRACTION ANALYSIS;

EID: 17444422192     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L230     Document Type: Article
Times cited : (30)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.