Morphology and crystallization of ultrathin HfON (EOT≤1 nm) with TiN metal gate

Electrochemical and Solid-State Letters

Volumn 9, Issue 3, 2006, Pages

  Song, S C ^a,b   Sim, J H ^a   Zhang, Z ^a   Bae, S H ^a   Kirsch, P ^a   Bersuker, G ^a   Lee, B H ^a  

^a SEMATECH   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CHARGE TRAPPING; COULOMB SCATTERING; METAL GATE;

CRYSTALLIZATION; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; MORPHOLOGY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ULTRATHIN FILMS;

EID: 31044444981     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2161441     Document Type: Article

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