Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 120-122

  Uedono, A ^a   Mitsuhashi, R ^b   Horiuchi, A ^b   Torii, K ^b   Yamabe, K ^a   Yamada, K ^c   Suzuki, R ^d   Ohdaira, T ^d   Mikado, T ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Atmospheric measurements; CMOS technology; Electrons; Energy measurement; High K dielectric materials; High K gate dielectrics; Materials science and technology; Personal digital assistants; Positrons; Semiconductor films

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEFECTS; DIELECTRIC MATERIALS; ELECTRIC POWER MEASUREMENT; ELECTRONS; FILMS; PERSONAL DIGITAL ASSISTANTS; POINT DEFECTS; POSITRONS;

ATMOSPHERIC MEASUREMENT; CMOS TECHNOLOGY; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; MATERIALS SCIENCE AND TECHNOLOGY; SEMICONDUCTOR FILMS;

GATE DIELECTRICS;

EID: 84945120866     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159197     Document Type: Conference Paper

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