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Volumn 35, Issue 4 A, 1996, Pages 2000-2007

Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P+-implanted Si studied using monoenergetic positron beams

Author keywords

Defect; Ion implantation; Monoenergetic positron beam; Oxygen; Positron annihilation; Si; Vacancy

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; EFFECTS; FILM GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; OXYGEN; SILICA; SUBSTRATES;

EID: 0030123742     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2000     Document Type: Article
Times cited : (25)

References (41)
  • 15
    • 0002894337 scopus 로고
    • ed. P. Hautojärvi Springer-Verlag, Berlin
    • R. N. West: Positrons in Solids, ed. P. Hautojärvi (Springer-Verlag, Berlin, 1979) p. 89.
    • (1979) Positrons in Solids , pp. 89
    • West, R.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.