Critical thickness and strain relaxation in lattice mismatched II-VI semiconductor layers

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4724-4733

  Pinardi, K ^a   Jain, Uma ^a,c   Jain, S C ^a   Maes, H E ^a   Van Overstraeten, R ^a   Willander, M ^b  

^a IMEC   (Belgium)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELASTICITY; EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUCLEATION; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN;

CONTINUUM ELASTICITY THEORY; CRITICAL THICKNESS; LATTICE MISMATCH; SEMICONDUCTOR EPILAYERS; STRAIN RELAXATION;

SEMICONDUCTOR MATERIALS;

EID: 0032072411     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367261     Document Type: Article

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