Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1113-1117

  Rohmfeld, Stefan ^a   Hundhausen, Martin ^a   Ley, Lothar ^a   Zorman, Christian A ^b   Mehregany, Mehran ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Case Western Reserve University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; BIAXIAL STRAINS; CRYSTALLINE QUALITY; LONGITUDINAL OPTICAL; MEMBRANE DEFLECTIONS; PREPARATION CONDITIONS; PRESSURE LOAD; QUANTITATIVE EVALUATION; RAMAN LINES; RESIDUAL STRAINS; SI (100) SUBSTRATE; STRAIN-INDUCED SHIFTS; THERMAL EXPANSION COEFFICIENTS;

FILM PREPARATION; RAMAN SPECTROSCOPY; SILICON;

SILICON CARBIDE;

EID: 0036469870     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427408     Document Type: Article

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