CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2585-2588

  Nishiguchi, Taro ^a   Mukai, Yusuke ^a   Ohshima, Satoru ^a   Nishino, Shigehiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C/SI RATIO; CVD GROWTHS; ITS APPLICATIONS; NITRIDE SEMICONDUCTORS; SI SUBSTRATES; SMOOTH SURFACE; SOURCE GAS; SUBSTRATE ORIENTATION;

NITRIDES; SEMICONDUCTOR GROWTH; SILICON; SILICON CARBIDE;

SUBSTRATES;

EID: 65549093398     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303524     Document Type: Conference Paper

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