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Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 15, 2005, Pages 2912-2919

Radiation-induced effects in GaN by photoconductivity analysis

(3) Castaldini, A a Cavallini, A a Polenta, L a

a UNIVERSITY OF BOLOGNA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION-INDUCED EFFECTS; SPECTRAL PHOTOCONDUCTIVITY; BAND TRANSITIONS; FORBIDDEN GAPS; HIGH ENERGY PROTON; HYDRIDE VAPOUR PHASE EPITAXIES; PERSISTENT PHOTOCURRENTS; WIDE-GAP SEMICONDUCTOR;

CHARGE CARRIERS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PROTON IRRADIATION; SEMICONDUCTOR MATERIALS; VAPOR PHASE EPITAXY; GALLIUM NITRIDE; IRRADIATION; SURFACE DEFECTS;

GALLIUM NITRIDE; RADIATION EFFECTS;

EID: 29744433527 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200521110 Document Type: Article

Times cited : (8)

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