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Solid State Phenomena

Volumn 78-79, Issue , 2001, Pages 95-102

Recombination properties of defects in gallium nitride

(4) Castaldini, A a Cavallini, A a Polenta, L a Salviati, G a

a UNIVERSITY OF BOLOGNA (Italy)

Author keywords

CL analyses; Deep level; Defect; EBIC analyses; Gallium nitride; Photocurrent persistence; Recombination activity

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DECOMPOSITION; DIFFUSION IN SOLIDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAMS; LUMINESCENCE; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PROTONS; VAPOR PHASE EPITAXY;

DEEP LEVEL; ELECTRON BEAM INDUCED CURRENT; PHOTOCURRENT DECAY; PHOTOCURRENT PERSISTENCE;

GALLIUM NITRIDE;

EID: 0035014349 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.78-79.95 Document Type: Conference Paper

Times cited : (7)

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