Electrical and optical characterization of GaN HVPE layers related to extended defects

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13095-13104

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Diaz Guerra C ^b   Piqueras, J ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; INTERFACES (MATERIALS); OPTICAL PROPERTIES; SAPPHIRE; SURFACES; VAPOR PHASE EPITAXY;

EXTENDED DEFECTS; LATTICE MISMATCH; THICKNESS;

GALLIUM NITRIDE;

EID: 0037122064     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/355     Document Type: Article

References (25)

1. Morkoç H 2001 Mater. Sci. Eng. R 33 135 and references therein
2. Fang Z-Q, Look D C, Jasinski J, Banamara M, Liliental-Weber Z and Molnar R J 2001 Appl. Phys. Lett. 78 332
3. Molnar R J 1999 Semicond. Semimet. 57 1
4. Castaldini A, Cavallini A and Polenta L 2000 Mater. Res. Soc. Symp. Proc 588 51
5. Qiu C H and Pankove J I 1997 Appl. Phys. Lett. 70 1983
6. Beadie G, Rabinovich W S, Wickenden A E, Koleske D D, Binari S C and Freitas J A Jr 1997 Appl. Phys. Lett. 71 1092
7. Urbieta A, Fernández P, Piqueras J, Hardalov Ch and Sekiguchi T 2001 J. Phys. D: Appl. Phys. 34 2945
8. Look D C, Reynolds D C, Hemsky J W, Sizelove J R, Jones R L and Molnar R J 1997 Phys. Rev. Lett. 79 2273
9. Herrera M, Zaldívar P, Fernández P and Piqueras J 1998 J. Appl. Phys. 83 2796
10. Castaldini A, Cavallini A, Polenta L, Díaz-Guerra C and Piqueras J 2002 Mater. Sci. Eng. B 91/92 308-12
11. Kauffmann U, Kunzer M, Obloh H, Maier M, Manz Ch, Ramakrishan A and Santic B 1999 Phys. Rev. B 59 5561
12. Klein P B, Binari S C, Freitas J A Jr and Wickenden A E 2000 J. Appl. Phys. 88 2843
13. Shmidt J A and Rubinelli F A 1998 J. Appl. Phys. 83 339
14. Bube R H 1992 Photoelectronic Properties of Semiconductors (Cambridge: Cambridge University Press)
15. Levinshtein M E, Rumyantsev S L and Shur M S (ed) 2001 Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe (New York: Wiley)
16. Bertram F, Srinivasan S, Ponce F, Reinmann T, Christen J and Molnar R J 2001 Appl. Phys. Lett. 78 1222
17. Perlin P, Mattos L, Shapiro N A, Kruger J, Wong W S, Sands T, Cheung N W and Weber E R 1999 J. Appl. Phys. 85 2385
18. Reynolds D C, Look D C, Jogai B, Hoelscher J E, Sherriff R E and Molnar R J 2000 J. Appl. Phys. 88 1460
19. Neugebauer J and Van de Walle C G 1996 Appl. Phys. Lett. 69 503
20. Saarinen K et al 1997 Phys. Rev. Lett. 79 3030
21. Yang H C, Lin T Y and Chen Y F 2000 Phys. Rev. B 62 12593
22. Jones R et al 1999 Phys. Status Solidi a 171 167
23. Reshchikov M A, Morkoç H. Park S S and Lee K Y 2001 Appl. Phys. Lett. 78 3041
24. Shalish I. Kronik L, Segal G, Rosenwaks Y. Shapira Y, Tisch U and Salzman J 1999 Phys. Rev. B 59 9748
25. Queisser H J and Theodorou D E 1986 Phys. Rev. B 33 4027