Fast proton damage effects on the luminescence properties of high-quality GaN

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 725-730

  Yang, Qing ^a   Feick, Henning ^a   Armitage, Rob ^a   Weber, Eicke R ^a  

^a Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; HYDRIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PROTON IRRADIATION; VAPOR PHASE EPITAXY;

BAND EDGE LUMINESCENCE; CARRIER LIFETIME; FAST PROTON DAMAGE EFFECTS; HOMOEPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 0036375787     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)