Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4326-4333

  Gaubas, E ^a   Jursenas S ^a   Miasojedovas, S ^a   Vaitkus, J ^a   Zukauskas A ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRODES; EPITAXIAL GROWTH; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; THIN FILMS; ULTRAVIOLET RADIATION;

CONTACT PHOTOCONDUCTIVITY (CPC); MULTITRAPPING PROCESSES; RELAXATION RATES; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 7544236846     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788840     Document Type: Article

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