A model of electrical isolation in GaN and ZnO bombarded with light ions

Semiconductors

Volumn 38, Issue 10, 2004, Pages 1179-1186

  Titov, A I ^a   Karasev, P A ^a   Kucheyev, S O ^b  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8744252587     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1808825     Document Type: Article

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