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Volumn 226-228, Issue 1, 2004, Pages 91-111

Experimental studies of defects, implants and their processes in ion-irradiated gallium nitride single crystals

Author keywords

Defect Microstructures; Disorder Accumulation and Recovery; GaN; Ion Irradiation

Indexed keywords

CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; DEFECTS; GALLIUM NITRIDE; ION IMPLANTATION; IRRADIATION; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 2942653098     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.226-228.91     Document Type: Review
Times cited : (22)

References (44)
  • 3
    • 0004429642 scopus 로고    scopus 로고
    • GaN and related alloys
    • Materials Research Socity, Warrendale, PA
    • S.J. Pearton, C. Kuo, A.F. Wright and T. Uenoyama (editors): GaN and Related Alloys (Materials Research Socity, Warrendale, PA, 1999); MRS Symp. Proc., vol 537.
    • (1999) MRS Symp. Proc. , vol.537
    • Pearton, S.J.1    Kuo, C.2    Wright, A.F.3    Uenoyama, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.