SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 647, Issue , 2001, Pages

Properties of gallium disorder and gold implants in GaN

(4) Jiang, W a Weber, W J a Thevuthasan, S a Shutthanandan, V a

a PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ATOMS; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GOLD; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING FILMS; SINGLE CRYSTALS;

CHANNELING GEOMETRY; IMPLANTATION DAMAGE; ION FLUENCE; THERMAL ANNEALING;

GALLIUM NITRIDE;

EID: 0035160684 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (4)

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