Ion beam and photoluminescence studies of Er and O implanted GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 383-387

  Alves, E ^a   Da Silva, M F ^a   Soares, J C ^b   Vianden, R ^c   Bartels, J ^c   Kozanecki, A ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

^c UNIVERSITY OF BONN   (Germany)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ERBIUM; ION BEAMS; OXYGEN; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

GALLIUM NITRIDE; SUBSTITUTIONAL SITE;

ION IMPLANTATION;

EID: 0032734585     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00582-5     Document Type: Article

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