Computational modeling of SiC epitaxial growth in a hot wall reactor

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 560-571

  Ji, W ^a   Lofgren, P M ^a,b   Hallin, C ^a,c   Gu, C Y ^a   Zhou, G ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HYDROGEN; MATHEMATICAL MODELS; PROPANE; SILANES;

HOT WALL REACTORS;

SILICON CARBIDE;

EID: 0034500632     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00843-5     Document Type: Article

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