High-performance polymer TFTs printed on a plastic substrate

IEEE Transactions on Electron Devices

Volumn 49, Issue 11, 2002, Pages 2008-2015

  Park, Sung Kyu ^a   Kim, Yong Hoon ^a   Han, Jeong In ^a   Moon, Dae Gyu ^a   Kim, Won Keun ^a  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Dual layer dielectric; Microcontact printing; Plastic substrate; Polymer thin film transistor (TFT)

Indexed keywords

CARRIER MOBILITY; ELASTOMERS; ELECTRODES; ION BEAM ASSISTED DEPOSITION; ORGANIC POLYMERS; SILICA; SUBSTRATES; SURFACE ROUGHNESS;

PLASTIC SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0036866063     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803642     Document Type: Article

References (25)

1. J.H. Schön, S. Berg, Ch. Kloc, and B. Batlogg, "Ambipolar pentance field-effect transistor and inverters," Science, vol. 287, p. 1022, 2000.
2. H. Klauk, D.J. Gundlach, J.A. Nichols, and T.N. Jackson, "Pentacene organic thin-film transistors for circuit and display applications," IEEE Trans. Electron Devices, vol 46, p. 1258, June 1999.
3. H. Sirringhaus, N. Tessler, and R.H. Friend, "Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodes," Synth. Metals, vol 102, p. 857, 1999.
4. P.J. Brown, H. Sirringhaus, and R.H. Friend, "Electro-optical characterization of field effect devices with regioregular poly-hexylthiophene active layers," Synth. Metals, vol. 101, p. 557, 1999.
5. Z. Ban, A. Dodabalapur, and A.J. Lovinger, "Soluble and processable regioregular poly(3-hexylthiophenes) for thin-film field-effect transistor applications with high mobility," Appl. Phys. Lett., vol. 69, p. 4108, 1996.
6. J.A. Rogers, "Rubber stamping for plastic electronics and fiber optics," MRS Bull., vol. 26, p. 530, 2001.
7. B. Michel, A. Bernard, A. Bietsch, E. Delamarche, and H. Wolf, "Printing meets lithography: Soft approaches to high-resolution patterning," IBM J. Res. Develop., vol. 45, p. 697, 2001.
8. S.K. Park, J.I. Han, and W.K. Kim, "Mechanics of indium-tin-oxide films on polymer substrate with organic buffer layer," in Proc. Mat. Res. Soc. Symp. E, vol. 695, 2002, p. L.5.9.1.
9. 2," Appl. Phys. Lett., vol. 65, p. 3185, 1994.
10. D.W. Gao, Y. Kashiwazaki, and K. Muraoka, "Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma," J. Appl. Phys., vol. 82, p. 5680, 1997.
11. C.H. Kim, S.H. Jung, and M.K. Han, "Very low temperature E-gun evaporated gate oxide of TFTs on plastic substrate," in Proc. Mat. Res. Soc. Symp. Proc. E, vol. 685, 2001, p. D.5.1.1.
12. E.V. Jelenkovic and K.Y. Tong, "Stability of nitrided silicon dioxide deposited by reactive sputtering," Appl. Phys. Lett., vol. 67, p. 2693, 1995.
13. X. Xueping and D.W. Goodman, "New approach to the preparation of ultrathin silicon dioxide films at low temperature," Appl. Phys. Lett., vol. 61, p. 774, 1992.
14. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, "Highly reliable ultrathin silicon oxide films formation at low temperature by oxygen radical generated in high-density krypton plasma," IEEE Trans. Electron Devices, vol. 48, p. 1550, Aug. 2001.
15. D.J. Dumin, S.K. Mopuri, S. Vanchinathan, R.S. Scott, and T.G. Lewis, "High field emission related thin oxide wearout and breakdown," IEEE Trans. Electron Devices, vol. 42, p. 760, Apr. 1995.
16. G.M. Sessier, B. Hahn, and D.Y. Yoon, "Electrical conduction in polyimide films," J. Appl. Phys., vol. 60, p. 318, 1985.
17. T.B. Hook, "Polyimide-Related design considerations in a bipolar technology," IEEE Trans. Electron Devices, vol. 37, p 1714, July 1990.
18. 2 system," J. Electron. Mater., vol. 14, p. 379, 1985.
19. F. Smith, H.J. Neuhaus, S.D. Senturia, Z. Feit, D.R. Day, and T. Lewis, "Electrical conduction in polyimide between 20 and 350° C," J. Electron. Mater., vol. 16, p. 379, 1987.
20. H. Sirringhaus, P.J. Brown, and R.H. Friend, "Two-deimentional charge transport in self-organized, high-mobility conjugated polymers," Nature, vol. 401, p. 685, 1999.
21. C. Yang, F.P. Orfino, and S. Holdcroft, "A phenomenological model for predicting thermochromism of regioregular and nonregioregular poly(3-alkylthiophenes)," Macromolecules, vol. 29, p. 6510, 1996.
22. A. Tsumura, H. Koezuka, and T. Ando, "Macromolecular electronic device: Field-effect transistor with a polythiophene thin film," Appl. Phys. Lett., vol. 49, p. 1210, 1998.
23. B.C. Lim, Y.J. Choi, J.H. Choi, and J. Jang, "Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride," IEEE Trans. Electron Devices, vol. 47, p. 367, Feb. 2000.
24. T.A. Beierlein, W. Brutting, H. Riel, E.I. Haskal, P. Muller, and W. Rieß, "Kelvin probe investigatious of metal work functions and correlation to device performance of organic light-emitting devices," Synth. Metals, vol. 111-112, p. 295, 2000.
25. I. Kymissis, C.D. Dimitrakopoulos, and S. Purushothaman, "High performance bottom electrode organic thin-film transistor," IEEE Trans. Electron Devices, vol. 48, p. 1060, June 2001.