A low complexity 0.13 μm SiGe BiCMOS technology for wireless and mixed signal applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 237-240

  Lanzerotti, L ^a   Feilchenfeld, N ^a   Coolbaugh, D ^a   Slinkman, J ^a   Gray, P ^a   Sheridan, D ^a   Higgins, J ^a   Hodge, W ^a   Gordon, M ^a   Larsen, T ^a   Gautsch, M ^a   Lindgren, P ^a   Murty, R ^a   Rascoe, J ^a   Watson, K ^a   Stamper, T ^a   Eshun, E ^a   He, J ^a   Downes, K ^a   Rassel, R ^a   Greco, J ^a   Labelle, B ^a   Sweeney, S ^a   Stein, K ^a   Bolam, R ^a   Vaed, K ^a   Orner, B ^a   Joseph, A ^a   St Onge, S ^a   Dunn, J ^a   more..

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; DEEP TRENCH ISOLATION; HIK DIELECTRICS; LOW TOLERANCE RESISTORS; STATE-OF-THE-ART PERFORMANCE;

BIPOLAR TRANSISTORS; COSTS; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; EXTRAPOLATION; FIELD EFFECT TRANSISTORS; OPTIMIZATION; RESISTORS; VOLTAGE CONTROL;

CMOS INTEGRATED CIRCUITS;

EID: 20144387294     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. D. Harame, et al, ESSDERC 2002 Proceedings, p. 53, 2002.
2. B. Orner, et al, BCTM Proceedings, p. 203, 2003.
3. M. Laurens, et al, BCTM Proceedings, p. 207, 2003.
4. N. Feilchenfeld, et al, BCTM Proceedings, p. 197, 2002.
5. B. Heinemann, et al, IEDM Technical Digest, p. 775, 200