Localized excess negative charges in surface states of the clean Ga-rich GaAs(100)c(8×2)/4×2 reconstruction as imaged by scanning tunneling microscopy

Journal of Chemical Physics

Volumn 113, Issue 6, 2000, Pages 2060-2063

  Kruse, Peter ^a   McLean, James G ^b   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; IMAGE ANALYSIS; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTIES;

ATOMIC CLUSTERS; LOCALIZED EXCESS NEGATIVE CHARGES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034250250     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.482016     Document Type: Article

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