Role of defects in two-dimensional phase transitions: An STM study of the Sn/Ge(111) system

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 3, 2000, Pages 2235-2245

  Melechko, A V ^a,b   Braun, J ^a,b   Weitering, H H ^a,b   Plummer, E W ^a,b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243827366     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevb.61.2235     Document Type: Article

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27. These images were taken on a different instrument where the temperature was not calibrated. The temperature has been determined using our fitting procedure of simulated STM images [Eq. (1)] to determine l(T) and Fig. 6. Due to the small area imaged, there is an appreciable error in determination of the temperature (ΔT=±20 K), which is estimated to be 120 K. Because sharp domain boundaries were absent in this image, it is certainly above the phase-transition temperature and above 105 K.