Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer

Surface Science

Volumn 352-354, Issue , 1996, Pages 71-76

  Resch Esser, U ^a   Esser, N ^a   Wang, D T ^b   Kuball, M ^b   Zegenhagen, J ^b   Fimland, B O ^c   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL ATOMIC STRUCTURE; DESORPTION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PASSIVATION; PROTECTIVE COATINGS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

DECAPPING; SURFACE QUALITY; SURFACE RECONSTRUCTION; SURFACE RELAXATION; THERMAL DESORPTION;

SURFACE STRUCTURE;

EID: 0030145713     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01093-9     Document Type: Article

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