Gettering of implanted Au in MeV∈C implanted Si

Applied Physics A: Materials Science and Processing

Volumn 82, Issue 2, 2006, Pages 297-304

  Mohapatra, S ^a   Joseph, B ^a   Satpati, B ^a   Mahapatras, D P ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GOLD; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; GETTERING EFFICIENCY; IMPLANTED LAYERS; ISOCHRONAL ANNEALING;

GETTERS;

EID: 28644452647     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-005-3297-y     Document Type: Article

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