Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon

Applied Physics Letters

Volumn 83, Issue 7, 2003, Pages 1367-1369

  Kvit, A ^a   Yankov, R A ^a   Duscher, G ^a,c   Rozgonyi, G ^a   Glasko, J M ^b  

^a North Carolina State University   (United States)

^b INTEL CORPORATION   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CHEMISORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; GETTERS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS;

NANOSCALE VOIDS;

CRYSTAL IMPURITIES;

EID: 0042739525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1601678     Document Type: Article

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