Crystallisation mechanism of amorphous silicon carbide

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 123-127

  Calcagno, L ^a   Musumeci, P ^a   Roccaforte, F ^a   Bongiorno, C ^b   Foti, G ^a  

^a INFM   (Italy)

^b CNR IMETEM   (Italy)

Author keywords

Annealing; Bonds; Grains; Polycrystalline

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; INFRARED SPECTROSCOPY; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE GRAINS;

SILICON CARBIDE;

EID: 0035852202     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00487-1     Document Type: Article

References (19)