Formation and annealing of periodically arranged amorphous SiCx nanoclusters in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 206-211

  Lindner, J K N ^a   Haberlen M ^a   Schmid, M ^a,b   Attenberger, W ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Amorphization; Interstitials; Nanocrystals; Si; SiC; Thermal crystallization

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTALLIZATION; NANOSTRUCTURED MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CARBON IMPLANTATIONS; CRYSTALLINE INCLUSIONS;

SILICON CARBIDE;

EID: 0036135513     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00922-3     Document Type: Article

References (18)