Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 222, Issue 1-2, 2004, Pages 249-254

  Mohapatra, S ^a   Mahapatra, D P ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

Annealing behavior; Ion implantation; Radiation damage; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLIZATION; DIFFUSION; INSULATING MATERIALS; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING BEHAVIOR; BIMODAL DISTRIBUTIONS; ION DISTRIBUTIONS; SOLID STATE DIFFUSION;

SEMICONDUCTING SILICON;

EID: 2642543285     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.215     Document Type: Article

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