Low current MeV Au2+ ion-induced amorphization in silicon: Rutherford backscattering spectrometry and transmission electron microscopy study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 207, Issue 3, 2003, Pages 291-295

  Kamila, J ^a,b   Satpati, B ^a   Goswami, D K ^a   Rundhe, M ^a   Dev, B N ^a   Satyam, P V ^a  

^a INSTITUTE OF PHYSICS   (India)

^b Buxi Jagabandhu Bidyadhar College   (India)

Author keywords

Amorphization; Dynamical annealing; MeV ion implantation; Surface and interfaces

Indexed keywords

AMORPHIZATION; ANNEALING; ELECTRIC CURRENTS; GOLD; INTERFACES (MATERIALS); ION IMPLANTATION; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

DYNAMICAL ANNEALING;

AMORPHOUS SILICON;

EID: 0037703006     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00459-2     Document Type: Article

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