The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation

Nanotechnology

Volumn 16, Issue 12, 2005, Pages 2987-2992

  Grisolia, J ^a   Shalchian, M ^b,c,d   Ben Assayag, G ^b   Coffin, H ^b   Bonafos, C ^b   Schamm, S ^b   Atarodi, S M ^c,d   Claverie, A ^b  

^a INSA   (France)

^b CEMES CNRS   (France)

^c SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^d IMRC   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; ION IMPLANTATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROSTATIC INTERACTION; NANOCRYSTALS; ROOM TEMPERATURE; SCANNING TEM (STEM);

NANOSTRUCTURED MATERIALS;

EID: 27944443993     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/16/12/043     Document Type: Article

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