Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 281-286

  Coffin, H ^a   Bonafos, C ^a   Schamm, S ^a   Cherkashin, N ^a,b   Respaud, M ^c   Ben Assayag, G ^a   Dimitrakis, P ^d   Normand, P ^d   Tence M ^e   Colliex, C ^e   Claverie, A ^a  

^a CEMES CNRS   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSA   (France)

^d INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^e UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LOSS SPECTROSCOPY; ION IMPLANTATION; MICROELECTRONICS; NONVOLATILE STORAGE; OXYGEN; RATE CONSTANTS; SILICA; SILICON; THERMOOXIDATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE STORAGE; FLOATING GATES; MICROELECTRONIC INDUSTRY; NANOCRYSTAL MEMORIES;

NANOSTRUCTURED MATERIALS;

EID: 20344393117     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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