Nucleation control of CVD growth silicon nanocrystals for quantum devices

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 511-515

  Baron, T ^a   Mazen, F ^a   Busseret, C ^a   Souifi, A ^a   Mur, P ^b   Fournel, F ^b   Semeria M N ^b   Moriceau, H ^b   Aspard, B ^b   Gentile, P ^c   Magnea, N ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

Author keywords

Coulomb blockade; LPCVD; Self organization; Silicon nanocrystals

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COULOMB BLOCKADE; DISLOCATIONS (CRYSTALS); ELECTRIC CHARGE; ELECTRIC PROPERTIES; FIELD PROGRAMMABLE GATE ARRAYS; NANOSTRUCTURED MATERIALS; NUCLEATION; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICA; SILICON WAFERS; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036643799     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00447-1     Document Type: Conference Paper

References (8)