Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 79-82

  Normand, P ^a   Tsoukalas, D ^a   Kapetanakis, E ^a   Van Den Berg, J A ^b   Armour, D G ^b   Stoemenos, J ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; FILM GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MOS DEVICES; NANOSTRUCTURED MATERIALS; OXIDES; SEMICONDUCTING SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL GROWTH; SILICA;

SILICON OXIDE; HIGH TEMPERATURE ANNEALING; SILICON NANOCRYSTAL FORMATION;

DIELECTRIC FILMS; SEMICONDUCTING SILICON;

EID: 0031150223     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00019-1     Document Type: Article

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