Sulfur passivation of Ga2O3 (Gd2O3)/GaAs metal-oxide-semiconductor structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2569-2572

  Eftekhari, G ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GADOLINIUM COMPOUNDS; GALLIUM COMPOUNDS; MOS DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

GALLIUM OXIDE; SUBSTRATE TEMPERATURE; SULFUR PASSIVATION;

DIELECTRIC FILMS;

EID: 0034264711     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1310658     Document Type: Article

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