Development of silicon nitride dots for nanocrystal memory cells

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1519-1524

  Wan, Y M ^a   Buffet, N ^b   Van Der Jeugd, K ^a   Mur, P ^b   Mariolle, D ^b   Nicotra, G ^c   Lombardo, S ^c  

^a ASM   (Belgium)

^b CEA GRENOBLE   (France)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; FLASH MEMORY; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE; STOICHIOMETRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NANODOTS; NITRIDATION;

NANOSTRUCTURED MATERIALS;

EID: 2942655102     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.020     Document Type: Conference Paper

References (9)

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